1 publication order number : mch3474/d ? semiconductor components industries, llc, 2015 june 2015 - rev. 1 www.onsemi.com mch3474 this power mosfet is produced using on semiconductor?s trench technology, which is specifically designed to minimize gate charge and low on resistance. this device is suitable for applications with low gate charge driving or low on resistance requirements. features ? low on-resistance ? high speed switching ? 1.8v drive ? esd diode-protected gate ? pb-free, halogen free and rohs compliance typical applications ? dc/dc converter specifications absolute maximum rating at ta = 25 c (note 1) parameter symbol value unit drain to source voltage v dss 30 v gate to source voltage v gss 12 v drain current (dc) i d 4a drain current (pulse) pw 10 s, duty cycle 1% i dp 16 a power dissipation when mounted on ceramic substrate (900mm 2 0.8mm) p d 1 w junction temperature tj 150 c storage temperature tstg ? 55 to +150 c note 1 : stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are ex ceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance ratings parameter symbol value unit junction to ambient r ja 125 c/w when mounted on ceramic substrate (900mm 2 0.8mm) power mosfet 30v, 50m ? , 4a, single n-channel v dss r ds (on) max i d max 30v 50m ? @ 4.5v 4a 72m ? @ 2.5v 130m ? @ 1.8v electrical connection n-channel packing type : tl marking ordering information see detailed ordering and shipping information on page 5 of this data sheet. tl ff lot no. lot no.
mch3474 www.onsemi.com 2 electrical characteristics at ta = 25 c (note 2) parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs = 8v, v ds =0v 10 a gate threshold voltage v gs (th) v ds =10v, i d =1ma 0.4 1.3 v forward transconductance g fs v ds =10v, i d =2a 2.0 3.4 s static drain to source on-state resistance r ds (on)1 i d =2a, v gs =4.5v 38 50 m r ds (on)2 i d =1a, v gs =2.5v 51 72 m r ds (on)3 i d =0.5a, v gs =1.8v 80 130 m input capacitance ciss v ds =10v, f=1mhz 430 pf output capacitance coss 59 pf reverse transfer capacitance crss 38 pf turn-on delay time t d (on) see specified test circuit 10 ns rise time t r 41 ns turn-off delay time t d (off) 36 ns fall time t f 37 ns total gate charge qg v ds =15v, v gs =4.5v, i d =4a 4.7 nc gate to source charge qgs 0.8 nc gate to drain ?miller? charge qgd 1.1 nc forward diode voltage v sd i s =4a, v gs =0v 0.82 1.2 v note 2 : product parametric performance is indicated in the elec trical characteristics for the listed test conditions, unless o therwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. switching time test circuit pw=10 s d.c.1% 4 .5v 0v v in p. g 50 g s i d =2a r l =7.5 v dd =15 v v out v in d mch3474
mch3474 www.onsemi.com 4
mch3474 www.onsemi.com 5 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. package dimensions unit : mm ordering information device marking package shipping (qty / packing) mch3474-tl-h ff sc-70fl / mcph3 (pb-free / halogen free) 3,000 / tape & reel MCH3474-TL-W ? for information on tape and reel specifications, including part orientation and tape sizes, plea se refer to our tape and reel packaging specifications brochure, brd8011/d. http://www.ons emi.com/pub_link/collateral/brd8011-d.pdf note on usage : since the mch3474 is a mosfet product, pl ease avoid using this device in the vicinity of highly charged objects. recommended soldering footprint 1 : gate 2 : source 3 : drain sc-70fl / mcph3 case 419aq issue o 0.65 0.65 0.4 2.1 0.6
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